Reflectionless tunneling was observed in Nb/GaAs superconductor/semiconductor junctionsfabricated by a two-step procedure. First, periodic δ-doped layers were grown by molecular-beam epitaxy near the GaAssurface, followed by an As cap layer to protect the surface during ex situ transfer. Second, Nb was deposited by dc-magnetron sputtering onto a GaAs(001) 2×4surfacein situ after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed.
Reflectionless tunneling in planar Nb/GaAs hybrid junctions
PINGUE, Pasqualantonio;BELTRAM, Fabio;
2000
Abstract
Reflectionless tunneling was observed in Nb/GaAs superconductor/semiconductor junctionsfabricated by a two-step procedure. First, periodic δ-doped layers were grown by molecular-beam epitaxy near the GaAssurface, followed by an As cap layer to protect the surface during ex situ transfer. Second, Nb was deposited by dc-magnetron sputtering onto a GaAs(001) 2×4surfacein situ after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
