We have performed magneto-transport experiments in bilayer and trilayer graphene, at temperatures between 2 and 190 K and magnetic fields up to 22 T. Here we study the observation of the quantum Hall effect in bilayer and trilayer graphene. We have observed the quantum Hall plateaus at ν = 4, 8, 12, 16, 20 in bilayer graphene and the quantum Hall plateaus ν = ±6 and studied their temperature dependence. We have also studied the symmetry properties which are related with different contact configurations and describe the method used to study inho-mogeneous samples

Quantum Hall effect in bilayer and trilayer graphene

ROSSELLA, FRANCESCO;
2012

Abstract

We have performed magneto-transport experiments in bilayer and trilayer graphene, at temperatures between 2 and 190 K and magnetic fields up to 22 T. Here we study the observation of the quantum Hall effect in bilayer and trilayer graphene. We have observed the quantum Hall plateaus at ν = 4, 8, 12, 16, 20 in bilayer graphene and the quantum Hall plateaus ν = ±6 and studied their temperature dependence. We have also studied the symmetry properties which are related with different contact configurations and describe the method used to study inho-mogeneous samples
2012
13th International Conference on the Formation of Semiconductor Interfaces (ICFSI-13)
Prague, Czech Republic
3-8 July 2011
Special Issue: 13th International Conference on the Formation of Semiconductor Interfaces (ICFSI-13).
WILEY-VCH Verlag GmbH & Co.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11384/14155
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