Non-reciprocal transport underpins key functionalities in signal processing and logic; however, conventional semiconductor diodes exhibit reduced performance at sub-Kelvin temperatures. As cryogenic electronics continue to scale, there is increasing demand for diode operation compatible with low-temperature and low-dissipation conditions. This need has driven the development of alternatives to p-n junctions that rely on non-reciprocal electron transport mechanisms efficient in the deep-cryogenic regime. Superconducting devices constitute a natural low-loss platform, yet most existing superconducting diodes are restricted to either Cooper-pair or quasiparticle transport, often requiring complex material stacks, asymmetric geometries, or external magnetic fields. No single, geometrically symmetric junction has yet integrated rectification across both transport channels to achieve vanishing resistance under forward bias and strongly suppressed conduction under reverse bias. Here, we demonstrate a dynamically reconfigurable dual-function superconducting diode based on a conventional Al/AlOx/Al tunnel junction. Via microwave biharmonic driving, we exploit multi-tone photon-assisted tunneling to independently control dissipationless and dissipative transport channels within the same device. Varying the microwave drive amplitude induces a transition from a supercurrent diode to an ideal quasiparticle diode, achieving rectification efficiencies exceeding those of conventional Schottky diodes and contemporary superconducting diodes. We further demonstrate AC signal rectification under both current-bias and voltage-bias configurations. Finally, we implement a proof-of-concept "absolute diode" that combines zero forward resistance with strongly suppressed reverse conduction. This tunable approach provides a versatile building block for low-power cryogenic electronic architectures.

Field-free dual superconducting diode via photon-assisted interference

Laura Borgongino;Francesco Giazotto;Elia Strambini
2026

Abstract

Non-reciprocal transport underpins key functionalities in signal processing and logic; however, conventional semiconductor diodes exhibit reduced performance at sub-Kelvin temperatures. As cryogenic electronics continue to scale, there is increasing demand for diode operation compatible with low-temperature and low-dissipation conditions. This need has driven the development of alternatives to p-n junctions that rely on non-reciprocal electron transport mechanisms efficient in the deep-cryogenic regime. Superconducting devices constitute a natural low-loss platform, yet most existing superconducting diodes are restricted to either Cooper-pair or quasiparticle transport, often requiring complex material stacks, asymmetric geometries, or external magnetic fields. No single, geometrically symmetric junction has yet integrated rectification across both transport channels to achieve vanishing resistance under forward bias and strongly suppressed conduction under reverse bias. Here, we demonstrate a dynamically reconfigurable dual-function superconducting diode based on a conventional Al/AlOx/Al tunnel junction. Via microwave biharmonic driving, we exploit multi-tone photon-assisted tunneling to independently control dissipationless and dissipative transport channels within the same device. Varying the microwave drive amplitude induces a transition from a supercurrent diode to an ideal quasiparticle diode, achieving rectification efficiencies exceeding those of conventional Schottky diodes and contemporary superconducting diodes. We further demonstrate AC signal rectification under both current-bias and voltage-bias configurations. Finally, we implement a proof-of-concept "absolute diode" that combines zero forward resistance with strongly suppressed reverse conduction. This tunable approach provides a versatile building block for low-power cryogenic electronic architectures.
2026
Settore PHYS-03/A - Fisica sperimentale della materia e applicazioni
Physics - Superconductivity; Physics - Superconductivity; Physics - Mesoscopic Systems and Quantum Hall Effect
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11384/174103
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