Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the low temperatures operation, linearity, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed.

Nanotransistor based THz plasma detectors: low tempeatures, graphene, linearity, and circular polarization studies

TREDICUCCI, ALESSANDRO;
2013

Abstract

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-of frequency. This work is an overview of some recent results concerning the low temperatures operation, linearity, and circular polarization studies of nanometer scale field effect transistors for the detection of terahertz radiation. Also first results on graphene transistors are discussed.
2013
Conference on Terahertz Emitters, Receivers, and Applications IV
San Diego, CA
AUG 25-26, 2013
Terahertz Emitters, Receivers, and Applications IVTerahertz Emitters, Receivers, and Applications IV
SPIE-INT SOC OPTICAL ENGINEERING
9780819496966
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11384/84581
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