Reflectionless tunneling was observed in Nb/GaAs superconductor/semiconductor junctionsfabricated by a two-step procedure. First, periodic δ-doped layers were grown by molecular-beam epitaxy near the GaAssurface, followed by an As cap layer to protect the surface during ex situ transfer. Second, Nb was deposited by dc-magnetron sputtering onto a GaAs(001) 2×4surfacein situ after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed.
|Titolo:||Reflectionless tunneling in planar Nb/GaAs hybrid junctions|
|Data di pubblicazione:||2000|
|Parole Chiave:||superconductivity; semiconductor quantum well; lithography|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1063/1.1357211|
|Appare nelle tipologie:||1.1 Articolo in rivista|