CINECA IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishReflectionless tunneling was observed in Nb/GaAs superconductor/semiconductor junctionsfabricated by a two-step procedure. First, periodic δ-doped layers were grown by molecular-beam epitaxy near the GaAssurface, followed by an As cap layer to protect the surface during ex situ transfer. Second, Nb was deposited by dc-magnetron sputtering onto a GaAs(001) 2×4surfacein situ after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed.
| Titolo: | Reflectionless tunneling in planar Nb/GaAs hybrid junctions |
| Autori: | |
| Data di pubblicazione: | 2000 |
| Rivista: | |
| Abstract: | Reflectionless tunneling was observed in Nb/GaAs superconductor/semiconductor junctionsfabricated by a two-step procedure. First, periodic δ-doped layers were grown by molecular-beam epitaxy near the GaAssurface, followed by an As cap layer to protect the surface during ex situ transfer. Second, Nb was deposited by dc-magnetron sputtering onto a GaAs(001) 2×4surfacein situ after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed. |
| Handle: | http://hdl.handle.net/11384/12686 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
Copyright © 2020