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EnglishReflectionless tunneling was observed in Nb/GaAs superconductor/semiconductor junctionsfabricated by a two-step procedure. First, periodic δ-doped layers were grown by molecular-beam epitaxy near the GaAssurface, followed by an As cap layer to protect the surface during ex situ transfer. Second, Nb was deposited by dc-magnetron sputtering onto a GaAs(001) 2×4surfacein situ after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed.
| Titolo: | Reflectionless tunneling in planar Nb/GaAs hybrid junctions |
| Autori: | |
| Data di pubblicazione: | 2000 |
| Rivista: | |
| Parole Chiave: | superconductivity; semiconductor quantum well; lithography |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.1357211 |
| Handle: | http://hdl.handle.net/11384/12686 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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