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EnglishResonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed magnetotransport properties are successfully analyzed within the random matrix theory of quantum transport, and ballistic effects are included by directly solving the Bogoliubov–de Gennes equations.
| Titolo: | Resonant Transport in Nb/GaAs/AlGaAs Heterostructures: Realization of the de Gennes–Saint-James Model | |
| Autori: | ||
| Data di pubblicazione: | 2001 | |
| Rivista: | ||
| Parole Chiave: | superconductivity; semiconductor quantum well; lithography | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevLett.87.216808 | |
| Handle: | http://hdl.handle.net/11384/12764 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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