Resonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed magnetotransport properties are successfully analyzed within the random matrix theory of quantum transport, and ballistic effects are included by directly solving the Bogoliubov–de Gennes equations.
|Titolo:||Resonant Transport in Nb/GaAs/AlGaAs Heterostructures: Realization of the de Gennes–Saint-James Model|
|Data di pubblicazione:||2001|
|Parole Chiave:||superconductivity; semiconductor quantum well; lithography|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1103/PhysRevLett.87.216808|
|Appare nelle tipologie:||1.1 Articolo in rivista|