We present a numerical model for shot-noise suppression in a semiconductor quantum wire, based on parameters obtained from a purposely fabricated and characterized device. Shot-noise suppression is studied as a function of the voltage applied to the depletion gates forming the wire in a GaAs/AlGaAs heterostructure, of the dopant concentration in the δ-doping layer, and of the length of the wire. Results provide an understanding of why a conclusive experimental demonstration of diffusive transport with 1/3 suppression of shot noise in mesoscopic semiconductor devices has so far proved to be elusive.
|Titolo:||Analysis of shot-noise suppression in disordered quantum wires|
|Data di pubblicazione:||2003|
|Parole Chiave:||semiconductors; noise; quantum transport|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/S1386-9477(03)00316-3|
|Appare nelle tipologie:||1.1 Articolo in rivista|