We present a numerical model for shot-noise suppression in a semiconductor quantum wire, based on parameters obtained from a purposely fabricated and characterized device. Shot-noise suppression is studied as a function of the voltage applied to the depletion gates forming the wire in a GaAs/AlGaAs heterostructure, of the dopant concentration in the δ-doping layer, and of the length of the wire. Results provide an understanding of why a conclusive experimental demonstration of diffusive transport with 1/3 suppression of shot noise in mesoscopic semiconductor devices has so far proved to be elusive.
Analysis of shot-noise suppression in disordered quantum wires
PINGUE, Pasqualantonio;BELTRAM, Fabio
2003-01-01
Abstract
We present a numerical model for shot-noise suppression in a semiconductor quantum wire, based on parameters obtained from a purposely fabricated and characterized device. Shot-noise suppression is studied as a function of the voltage applied to the depletion gates forming the wire in a GaAs/AlGaAs heterostructure, of the dopant concentration in the δ-doping layer, and of the length of the wire. Results provide an understanding of why a conclusive experimental demonstration of diffusive transport with 1/3 suppression of shot noise in mesoscopic semiconductor devices has so far proved to be elusive.File in questo prodotto:
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