The fabrication and performances of cantilevered probes with reduced parasitic capacitance starting from a commercial Si3N4 cantilever chip is presented. Nanomachining and metal deposition induced by focused ion beam techniques were employed in order to modify the original insulating pyramidal tip and insert a conducting metallic tip. Two parallel metallic electrodes deposited on the original cantilever arms are employed for tip biasing and as ground plane in order to minimize the electrostatic force due to the capacitive interaction between cantilever and sample surface. Excitation spectra and force-to-distance characterization are shown with different electrode configurations. Applications of this scheme in electrostatic force microscopy, Kelvin probe microscopy and local anodic oxidation is discussed.

Demonstration of an electrostatic-shielded cantilever

PINGUE, Pasqualantonio;
2006

Abstract

The fabrication and performances of cantilevered probes with reduced parasitic capacitance starting from a commercial Si3N4 cantilever chip is presented. Nanomachining and metal deposition induced by focused ion beam techniques were employed in order to modify the original insulating pyramidal tip and insert a conducting metallic tip. Two parallel metallic electrodes deposited on the original cantilever arms are employed for tip biasing and as ground plane in order to minimize the electrostatic force due to the capacitive interaction between cantilever and sample surface. Excitation spectra and force-to-distance characterization are shown with different electrode configurations. Applications of this scheme in electrostatic force microscopy, Kelvin probe microscopy and local anodic oxidation is discussed.
Elecrostatics; cantilever; capacitance; focused ion beamtechnology; atomic force microscopes
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/12933
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