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EnglishLow field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe two-dimensional electron gas in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak line shape clearly shows deviations from the predictions of ballistic weak localization theory.
| Titolo: | Low field magnetotransport in strained Si/SiGe cavities | |
| Autori: | ||
| Data di pubblicazione: | 2005 | |
| Rivista: | ||
| Parole Chiave: | semiconductors; ELECTRON DOUBLE-LAYERS, PHASE-TRANSITIONS, MAGNETIC-FIELD, ENERGY-SPECTRUM, | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.71.245311 | |
| Handle: | http://hdl.handle.net/11384/12939 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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