Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe two-dimensional electron gas in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak line shape clearly shows deviations from the predictions of ballistic weak localization theory.
|Titolo:||Low field magnetotransport in strained Si/SiGe cavities|
|Data di pubblicazione:||2005|
|Parole Chiave:||semiconductors; ELECTRON DOUBLE-LAYERS, PHASE-TRANSITIONS, MAGNETIC-FIELD, ENERGY-SPECTRUM,|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1103/PhysRevB.71.245311|
|Appare nelle tipologie:||1.1 Articolo in rivista|