Highly Sensitive Hall Sensors Based on Chemical Vapor Deposition Graphene

In this work, we demonstrate highly sensitive and scalable Hall sensors fabricated by adopting arrays of monolayer single-crystal chemical vapor deposition (CVD) graphene. The devices are based on graphene Hall bars with a carrier mobility of >12000 cm(2) V-1 s(-1) and a low residual carrier density of similar to 1 x 10(11) cm(-2), showing Hall sensitivity higher than 5000 V A(-1) T-1, which is a value previously only achieved when using exfoliated graphene encapsulated with flakes of hexagonal boron nitride. We also implement a facile and scalable polymeric encapsulation, allowing the performance of graphene Hall bars to be stabilized when measured in an ambient environment. We demonstrate that this capping method can reduce the degradation of electrical transport properties when the graphene devices are kept in air over 10 weeks. State-of-the-art performance of the realized devices, based on scalable synthesis and encapsulation, contributes to the proliferation of graphene-based Hall sensors.