We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit similar to 1 GHz -3 dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672438]

Lasing in planar semiconductor diodes

Tredicucci A;BELTRAM, Fabio
2011

Abstract

We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit similar to 1 GHz -3 dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672438]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11384/1640
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