We present a study of the effect of uniaxial stress on the electric-dipole spin resonance absorption in zinc-blende semiconductors. We show that previous work in this field omits an important contribution to the transition amplitude, leading to an underestimate of the strength C2 of the stress-induced spin-orbit coupling in InSb. The necessary correction factor is between 3 and 4. We suggest experimental configurations that would permit an accurate measurement of this and other related material parameters. One of these exploits the possibility of an interference between stress-induced and stress-free spin-flip transition amplitudes. In this way, not only the magnitude of C2, but also its sign, could be determined.
EFFECT OF UNIAXIAL-STRESS ON THE ELECTRON-SPIN RESONANCE IN ZINCBLENDE SEMICONDUCTORS
LA ROCCA, Giuseppe Carlo;
1988
Abstract
We present a study of the effect of uniaxial stress on the electric-dipole spin resonance absorption in zinc-blende semiconductors. We show that previous work in this field omits an important contribution to the transition amplitude, leading to an underestimate of the strength C2 of the stress-induced spin-orbit coupling in InSb. The necessary correction factor is between 3 and 4. We suggest experimental configurations that would permit an accurate measurement of this and other related material parameters. One of these exploits the possibility of an interference between stress-induced and stress-free spin-flip transition amplitudes. In this way, not only the magnitude of C2, but also its sign, could be determined.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
