We present a study of the effect of uniaxial stress on the electric-dipole spin resonance absorption in zinc-blende semiconductors. We show that previous work in this field omits an important contribution to the transition amplitude, leading to an underestimate of the strength C2 of the stress-induced spin-orbit coupling in InSb. The necessary correction factor is between 3 and 4. We suggest experimental configurations that would permit an accurate measurement of this and other related material parameters. One of these exploits the possibility of an interference between stress-induced and stress-free spin-flip transition amplitudes. In this way, not only the magnitude of C2, but also its sign, could be determined.

EFFECT OF UNIAXIAL-STRESS ON THE ELECTRON-SPIN RESONANCE IN ZINCBLENDE SEMICONDUCTORS

LA ROCCA, Giuseppe Carlo;
1988

Abstract

We present a study of the effect of uniaxial stress on the electric-dipole spin resonance absorption in zinc-blende semiconductors. We show that previous work in this field omits an important contribution to the transition amplitude, leading to an underestimate of the strength C2 of the stress-induced spin-orbit coupling in InSb. The necessary correction factor is between 3 and 4. We suggest experimental configurations that would permit an accurate measurement of this and other related material parameters. One of these exploits the possibility of an interference between stress-induced and stress-free spin-flip transition amplitudes. In this way, not only the magnitude of C2, but also its sign, could be determined.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11384/2700
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