Catalyst-assisted growth of semiconductor nanowires has opened up several new and exciting possibilities for low-dimensional semiconductor structures. The authors review progress on the realization of quantum dots in semiconductor nanowires, and their characterization by transport spectroscopy. Emphasis is placed on the wide range electronic properties exhibited due to flexibility of the growth process in terms of nanostructure composition and size. Particular attention is placed on studies of spin in few-electron quantum dots.
|Titolo:||Electronic properties of quantum dot systems realized in semiconductor nanowires|
|Data di pubblicazione:||2010|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1088/0268-1242/25/2/024007|
|Appare nelle tipologie:||1.1 Articolo in rivista|