We study the optical transitions and their relation to the crystal potential in ultrathin InAs/GaAs multiple quantum wells. Photoluminescence, photoluminescence excitation, and photoreflectance measurements evidence strong localization of the heavy- and light-hole excitons in submonolayer wide InAs quantum wells. A tight-binding model in the linear-chain approximation explains these results in terms of particle localization at the two-dimensional potential discontinuity produced by the insertion of the InAs plane in the host GaAs matrix.
|Titolo:||EXCITON LOCALIZATION IN SUBMONOLAYER INAS/GAAS MULTIPLE QUANTUM-WELLS|
|Data di pubblicazione:||1990|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1103/PhysRevB.42.3209|
|Appare nelle tipologie:||1.1 Articolo in rivista|