We study the optical transitions and their relation to the crystal potential in ultrathin InAs/GaAs multiple quantum wells. Photoluminescence, photoluminescence excitation, and photoreflectance measurements evidence strong localization of the heavy- and light-hole excitons in submonolayer wide InAs quantum wells. A tight-binding model in the linear-chain approximation explains these results in terms of particle localization at the two-dimensional potential discontinuity produced by the insertion of the InAs plane in the host GaAs matrix.

EXCITON LOCALIZATION IN SUBMONOLAYER INAS/GAAS MULTIPLE QUANTUM-WELLS

LA ROCCA, Giuseppe Carlo;
1990

Abstract

We study the optical transitions and their relation to the crystal potential in ultrathin InAs/GaAs multiple quantum wells. Photoluminescence, photoluminescence excitation, and photoreflectance measurements evidence strong localization of the heavy- and light-hole excitons in submonolayer wide InAs quantum wells. A tight-binding model in the linear-chain approximation explains these results in terms of particle localization at the two-dimensional potential discontinuity produced by the insertion of the InAs plane in the host GaAs matrix.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/5203
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 79
  • ???jsp.display-item.citation.isi??? 77
social impact