We theoretically study the elastic scattering of lower cavity polaritons on the static disorder in high quality semiconductor microcavities in the strong coupling regime. We consider the dominant contribution of the resonant scattering on localized exciton levels and calculate for a model density of states the corresponding elastic mean free path. Our analytical results compare well with available linewidth data and substantiate the possibility of weak localization.
Inhomogeneous broadening of polaritons in high-quality microcavities and weak localization
LA ROCCA, Giuseppe Carlo;
2001
Abstract
We theoretically study the elastic scattering of lower cavity polaritons on the static disorder in high quality semiconductor microcavities in the strong coupling regime. We consider the dominant contribution of the resonant scattering on localized exciton levels and calculate for a model density of states the corresponding elastic mean free path. Our analytical results compare well with available linewidth data and substantiate the possibility of weak localization.File in questo prodotto:
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