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EnglishThe crystal structure of GaP nanowires grown by Au-assisted chemical beam epitaxy was investigated as a function of group V flux and growth temperature. By increasing the tertiarybutyl phosphine flux we obtained nanowires with a stacking defect-free wurtzite crystal structure. Variation of growth temperature also had a profound impact on the crystal structure. Lowering the growth temperature from 600 to 560 °C and keeping constant both triethylgallium and tertiarybutyl phosphine precursor fluxes, the crystal structure of GaP NWs was drastically improved from a highly defective intergrowth of zinc-blende and wurtzite to a wurtzite crystal structure free of stacking defects. These results are compared to current literature on GaP NW growth, and we suggest that the low V/III ratio is the key ingredient for the high crystal quality of our GaP nanowires.
| Titolo: | Growth of defect-free GaP nanowires |
| Autori: | |
| Data di pubblicazione: | 2014 |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/0957-4484/25/20/205601 |
| Handle: | http://hdl.handle.net/11384/56697 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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