We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800 degrees C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000 degrees C, and they decrease the carrier mobility significantly.

Correlation between morphology and transport properties of quasi-free-standing monolayer graphene

BELTRAM, Fabio;
2014

Abstract

We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800 degrees C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000 degrees C, and they decrease the carrier mobility significantly.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/57210
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