We report the Pd-assisted chemical beam epitaxy growth of zinc blende InAs nanowires which are grown on InAs(111)A substrates by employing Pd octane and hexadecyl thiolates as catalyst precursors. The structural properties of these nanowires are investigated by scanning and transmission electron microscopy. Furthermore, we demostrate the growth of InAs nanowires on patterned substrates by employing the Pd hexadecylthiolate precursors as a direct-write resist in electron beam lithography.
|Titolo:||Pd-Assisted Growth of In As Nanowires|
|Data di pubblicazione:||2010|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1021/cg1008335|
|Appare nelle tipologie:||1.1 Articolo in rivista|