We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two-dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by electrostatic gates placed within the normal region of a planar Nb-InGaAs quantum well-Nb junction. Measurements in the regime of strong Coulomb blockade as well as cotunneling spectroscopy allow to directly probe the proximity-induced energy gap in a ballistic two-dimensional electron gas coupled to superconductors.

Quantum dot spectroscopy of proximity-induced superconductivity in a two-dimensional electron gas

BELTRAM, Fabio
2011

Abstract

We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two-dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by electrostatic gates placed within the normal region of a planar Nb-InGaAs quantum well-Nb junction. Measurements in the regime of strong Coulomb blockade as well as cotunneling spectroscopy allow to directly probe the proximity-induced energy gap in a ballistic two-dimensional electron gas coupled to superconductors.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/6450
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