We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two-dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by electrostatic gates placed within the normal region of a planar Nb-InGaAs quantum well-Nb junction. Measurements in the regime of strong Coulomb blockade as well as cotunneling spectroscopy allow to directly probe the proximity-induced energy gap in a ballistic two-dimensional electron gas coupled to superconductors.
Titolo: | Quantum dot spectroscopy of proximity-induced superconductivity in a two-dimensional electron gas | |
Autori: | ||
Data di pubblicazione: | 2011 | |
Rivista: | ||
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.3570660 | |
Handle: | http://hdl.handle.net/11384/6450 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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