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EnglishWe investigate light emission from nanoscale point-sources obtained in hybrid metal-GaAs nanowires embedding two sharp axial Schottky barriers. Devices are obtained via the formation of Ni-rich metallic alloy regions in the nanostructure body thanks to a technique of controlled thermal annealing of Ni/Au electrodes. In agreement with recent findings, visible-light electroluminescence can be observed upon suitable voltage biasing of the junctions. We investigate the time-resolved emission properties of our devices and demonstrate an electrical modulation of light generation up to 1 GHz. We explore different drive configurations and discuss the intrinsic bottlenecks of the present device architecture. Our results demonstrate a novel technique for the realization of fast subwavelength light sources with possible applications in sensing and microscopy beyond the diffraction limit.
| Titolo: | GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters | |
| Autori: | ||
| Data di pubblicazione: | 2016 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1021/acs.nanolett.6b02020 | |
| Parole Chiave: | GHz modulation; Schottky barrier; Subwavelength emitters; electroluminescence; optoelectronics; semiconductor nanowires | |
| Handle: | http://hdl.handle.net/11384/65110 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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