We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111) B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn2, and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.

InAs/InSb nanowires heterostructures grown by chemical beam epitaxy

ERCOLANI, Daniele;BELTRAM, Fabio;
2009

Abstract

We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111) B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn2, and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11384/6910
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