We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111) B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn2, and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.
|Titolo:||InAs/InSb nanowires heterostructures grown by chemical beam epitaxy|
|Data di pubblicazione:||2009|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1088/0957-4484/20/50/505605|
|Appare nelle tipologie:||1.1 Articolo in rivista|