The most accurate description of spin splittings in semiconductor nanostructures has been obtained from a 14-band k center dot p model, but the historical way in which it has developed from the 8-band Kane model has endorsed somewhat arbitrary values of the momentum and spin-orbit matrix elements. We have systematically determined the 14-band k center dot p parameters for III-V semiconductors from a 40-band tight-binding model. Significant changes with respect to previously accepted values were found even for GaAs. For all materials investigated, the resulting Dresselhaus spin-orbit coupling parameter is in good agreement with experimental values. The atomistic background of the present parametrization allows new insight into the spin-orbit coupling Delta(-) between bonding and antibonding orbitals and its dependence on ionicity.

Atomistic spin-orbit coupling and k center dot p parameters in III-V semiconductors

LA ROCCA, Giuseppe Carlo
2005

Abstract

The most accurate description of spin splittings in semiconductor nanostructures has been obtained from a 14-band k center dot p model, but the historical way in which it has developed from the 8-band Kane model has endorsed somewhat arbitrary values of the momentum and spin-orbit matrix elements. We have systematically determined the 14-band k center dot p parameters for III-V semiconductors from a 40-band tight-binding model. Significant changes with respect to previously accepted values were found even for GaAs. For all materials investigated, the resulting Dresselhaus spin-orbit coupling parameter is in good agreement with experimental values. The atomistic background of the present parametrization allows new insight into the spin-orbit coupling Delta(-) between bonding and antibonding orbitals and its dependence on ionicity.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/7114
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