A general three-dimensional model for asymmetric semiconductor quantum wires is introduced with exact and analytical solutions for the spin-dependent electronic structure. Simple expressions are obtained for the eigenvalues, wave functions, and spin expectation values, valid in both strong and weak Rashba spin-orbit coupling regimes. For III-V quantum wires, the Rashba interaction is shown to be typically in the weak coupling regime and to lead to considerable spin mixing only near the anticrossings, seen only in narrow-gap quantum wires. For realistic wires, the Rashba splitting is shown to decrease with increasing wire confinement.

Rashba spin splitting in semiconductor quantum wires

LA ROCCA, Giuseppe Carlo
2003

Abstract

A general three-dimensional model for asymmetric semiconductor quantum wires is introduced with exact and analytical solutions for the spin-dependent electronic structure. Simple expressions are obtained for the eigenvalues, wave functions, and spin expectation values, valid in both strong and weak Rashba spin-orbit coupling regimes. For III-V quantum wires, the Rashba interaction is shown to be typically in the weak coupling regime and to lead to considerable spin mixing only near the anticrossings, seen only in narrow-gap quantum wires. For realistic wires, the Rashba splitting is shown to decrease with increasing wire confinement.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11384/7404
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