Heterostructured InAs/InSb nanowire (Nw) based field effect transistors (FET) have been fabricated and tested as Terahetz radiation detectors. While responsivity and noise equivalent power compare with the ones of InAs nanowire detectors, the presence of small-gap InSb semiconductor gives rise to interesting physical effects such an increase of the detected signal with charge injection through the wire, at odds with standard FET-detectors. Additionally, the photodetected signal voltage changes its sign after a threshold gate bias, which we explain considering surface-related transport and field asymmetries imposed by the use of a lateral gate electrode.
Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors
PITANTI, ALESSANDRO;ERCOLANI, Daniele;BELTRAM, Fabio;Tredicucci A.;
2012
Abstract
Heterostructured InAs/InSb nanowire (Nw) based field effect transistors (FET) have been fabricated and tested as Terahetz radiation detectors. While responsivity and noise equivalent power compare with the ones of InAs nanowire detectors, the presence of small-gap InSb semiconductor gives rise to interesting physical effects such an increase of the detected signal with charge injection through the wire, at odds with standard FET-detectors. Additionally, the photodetected signal voltage changes its sign after a threshold gate bias, which we explain considering surface-related transport and field asymmetries imposed by the use of a lateral gate electrode.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
