We manipulate the center-of-mass motion of excitons by introducing fractions of a monolayer of InAs in bulklike GaAs. Deposition of InAs on various terraced surfaces provides the direct experimental control of the lateral extent of the InAs insertion and thus of the exciton motion. The optical response of excitons attached to these InAs insertions is predominantly determined by the dimensionality of their translational motion.

ROLE OF BROKEN TRANSLATIONAL INVARIANCE FOR THE OPTICAL-RESPONSE OF EXCITONS IN LOW-DIMENSIONAL SEMICONDUCTORS

LA ROCCA, Giuseppe Carlo;
1992

Abstract

We manipulate the center-of-mass motion of excitons by introducing fractions of a monolayer of InAs in bulklike GaAs. Deposition of InAs on various terraced surfaces provides the direct experimental control of the lateral extent of the InAs insertion and thus of the exciton motion. The optical response of excitons attached to these InAs insertions is predominantly determined by the dimensionality of their translational motion.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/7651
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