1. Introduction. 2. General theoretical considerations. 3. Electron Hamiltonian and g-factors of free and donor-bound electrons in zinc-blende semiconductors. 4. Intensity of the EDSR lines in n-type zinc-blende semiconductors. 5. Inversion asymmetry and hole magnetozoptics in the Voigt geometries. 6. Inversion asymmetry and hole magneto-optics in the Faraday geometries. Effect of background absorption.
INVERSION ASYMMETRY AND MAGNETO-OPTICS IN ZINCBLENDE SEMICONDUCTORS
LA ROCCA, Giuseppe Carlo;
1989
Abstract
1. Introduction. 2. General theoretical considerations. 3. Electron Hamiltonian and g-factors of free and donor-bound electrons in zinc-blende semiconductors. 4. Intensity of the EDSR lines in n-type zinc-blende semiconductors. 5. Inversion asymmetry and hole magnetozoptics in the Voigt geometries. 6. Inversion asymmetry and hole magneto-optics in the Faraday geometries. Effect of background absorption.File in questo prodotto:
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