1. Introduction. 2. General theoretical considerations. 3. Electron Hamiltonian and g-factors of free and donor-bound electrons in zinc-blende semiconductors. 4. Intensity of the EDSR lines in n-type zinc-blende semiconductors. 5. Inversion asymmetry and hole magnetozoptics in the Voigt geometries. 6. Inversion asymmetry and hole magneto-optics in the Faraday geometries. Effect of background absorption.

INVERSION ASYMMETRY AND MAGNETO-OPTICS IN ZINCBLENDE SEMICONDUCTORS

LA ROCCA, Giuseppe Carlo;
1989

Abstract

1. Introduction. 2. General theoretical considerations. 3. Electron Hamiltonian and g-factors of free and donor-bound electrons in zinc-blende semiconductors. 4. Intensity of the EDSR lines in n-type zinc-blende semiconductors. 5. Inversion asymmetry and hole magnetozoptics in the Voigt geometries. 6. Inversion asymmetry and hole magneto-optics in the Faraday geometries. Effect of background absorption.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/7654
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