We present a study of the effect of inversion asymmetry on magnetooptical transitions between hole states in zinc-blende semiconductors. This work extends previous work on the interference effects between inversion-asymmetry-induced electric-dipole amplitudes and magnetic-dipole and electric-quadrupole matrix elements in these materials. These effects yield changes in the optical absorption upon reversal of the applied magnetic field and can give information on the magnitude and sign of the Kane parameter for the valence band in these crystals. The present work is concerned with the anisotropy of the optical absorption for arbitrary direction of the applied magnetic field and with similar interference phenomena in the Faraday geometry which were not previously studied. We show that, in the Faraday geometry, such interferences occur only in the presence of strong background absorption.
ANISOTROPY AND INTERFERENCE EFFECTS IN MAGNETO-OPTICAL TRANSITIONS IN P-TYPE ZINCBLENDE SEMICONDUCTORS
LA ROCCA, Giuseppe Carlo;
1988
Abstract
We present a study of the effect of inversion asymmetry on magnetooptical transitions between hole states in zinc-blende semiconductors. This work extends previous work on the interference effects between inversion-asymmetry-induced electric-dipole amplitudes and magnetic-dipole and electric-quadrupole matrix elements in these materials. These effects yield changes in the optical absorption upon reversal of the applied magnetic field and can give information on the magnitude and sign of the Kane parameter for the valence band in these crystals. The present work is concerned with the anisotropy of the optical absorption for arbitrary direction of the applied magnetic field and with similar interference phenomena in the Faraday geometry which were not previously studied. We show that, in the Faraday geometry, such interferences occur only in the presence of strong background absorption.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
