Here, the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a transconductance value 30 times larger than standard back gating with the SiO2/Si++ substrate. Thanks to this wide modulation, the controlled evolution from semiconductor to metallic-like behavior in the nanowire is shown. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III–V semiconductor nanowires: this architecture opens the way to a wide range of fundamental and applied studies from the phase transitions to bioelectronics.

Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors

Demontis, Valeria;Prete, Domenic;Ercolani, Daniele;Beltram, Fabio;Rossella, Francesco
2019

Abstract

Here, the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a transconductance value 30 times larger than standard back gating with the SiO2/Si++ substrate. Thanks to this wide modulation, the controlled evolution from semiconductor to metallic-like behavior in the nanowire is shown. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III–V semiconductor nanowires: this architecture opens the way to a wide range of fundamental and applied studies from the phase transitions to bioelectronics.
Settore FIS/03 - Fisica della Materia
electric double layers; field-effect transistors; InAs nanowires; ionic-liquid gating; Chemistry (all); Materials Science (all); Condensed Matter Physics
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/78175
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