Archivio istituzionale della ricerca della Scuola Normale Superiore
IRIS SNS è l'archivio istituzionale destinato a raccogliere, conservare e diffondere ad accesso aperto la produzione scientifica degli autori afferenti alla Scuola Normale Superiore.
EnglishWe demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3ω technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency ω and measuring the voltage drop across the nanostructure at frequency 3ω. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated side-gate electrodes in combination with the SiO2/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.
| Titolo: | Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method | |
| Autori: | ||
| Data di pubblicazione: | 2018 | |
| Rivista: | ||
| Parole Chiave: | 3ω method; InAs; nanowire; suspended nanostructure; thermoelectric; Materials Science (all); Mechanics of Materials; Mechanical Engineering | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1007/s11665-018-3715-x | |
| Handle: | http://hdl.handle.net/11384/78176 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11384/78176
Copyright © 2022