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EnglishWe demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3ω technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency ω and measuring the voltage drop across the nanostructure at frequency 3ω. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated side-gate electrodes in combination with the SiO2/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.
| Titolo: | Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method | |
| Autori: | ||
| Data di pubblicazione: | 2018 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1007/s11665-018-3715-x | |
| Parole Chiave: | 3ω method; InAs; nanowire; suspended nanostructure; thermoelectric; Materials Science (all); Mechanics of Materials; Mechanical Engineering | |
| Handle: | http://hdl.handle.net/11384/78176 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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