We demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3ω technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency ω and measuring the voltage drop across the nanostructure at frequency 3ω. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated side-gate electrodes in combination with the SiO2/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.
|Titolo:||Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method|
|Data di pubblicazione:||2018|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1007/s11665-018-3715-x|
|Parole Chiave:||3ω method; InAs; nanowire; suspended nanostructure; thermoelectric; Materials Science (all); Mechanics of Materials; Mechanical Engineering|
|Appare nelle tipologie:||1.1 Articolo in rivista|