A relatively intense photocurrent density up to 3.8 mA cm-2 was induced by visible light in n+-doped porous silicon (n-PSi) coated with a eumelanin thin film produced by ammonia-induced solid state polymerization (AISSP) of 5,6-dihydroxyindole (DHI). The photocurrent was not affected by acetic acid vapors but was irreversibly abated by gaseous ammonia. No detectable photocurrent was observed using p+-PSi as the inorganic substrate. These results point to eumelanin as a powerful enhancer of PSi photoresponse to visible light via hole-type electrical conduction.
Boosting, probing and switching-off visible light-induced photocurrents in eumelanin-porous silicon hybrids
D'ISCHIA, MARCO;
2015
Abstract
A relatively intense photocurrent density up to 3.8 mA cm-2 was induced by visible light in n+-doped porous silicon (n-PSi) coated with a eumelanin thin film produced by ammonia-induced solid state polymerization (AISSP) of 5,6-dihydroxyindole (DHI). The photocurrent was not affected by acetic acid vapors but was irreversibly abated by gaseous ammonia. No detectable photocurrent was observed using p+-PSi as the inorganic substrate. These results point to eumelanin as a powerful enhancer of PSi photoresponse to visible light via hole-type electrical conduction.File in questo prodotto:
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