We report the experimental investigation of the optical properties of porous silicon embedded in a planar microcavity structure in which both the active layer and the two Bragg reflectors are fabricated by electrochemical processing of a p-type porous silicon wafer. By tuning the cavity resonance energy around the maximum of the porous silicon emission we have observed photoluminescence linewidths as narrow as 18-25 meV and an intensity enhancement of more than one order of magnitude. The experimental results are clarified by theoretical calculations performed with the standard transfer-matrix approach in the framework of a porous silicon quantum-box model.
ENHANCED OPTICAL-PROPERTIES IN POROUS SILICON MICROCAVITIES
TREDICUCCI, ALESSANDRO;
1995
Abstract
We report the experimental investigation of the optical properties of porous silicon embedded in a planar microcavity structure in which both the active layer and the two Bragg reflectors are fabricated by electrochemical processing of a p-type porous silicon wafer. By tuning the cavity resonance energy around the maximum of the porous silicon emission we have observed photoluminescence linewidths as narrow as 18-25 meV and an intensity enhancement of more than one order of magnitude. The experimental results are clarified by theoretical calculations performed with the standard transfer-matrix approach in the framework of a porous silicon quantum-box model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
