A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer embedded between two insulating barriers. A simple procedure, based on a detailed analysis of the differential conductance, allows one to accurately determine the polarization of the ferromagnet. The spin-filtering character of such a system is furthermore addressed. We show that a 100% spin selectivity can be achieved under appropriate conditions. This approach is believed to be well suited for the investigation of diluted magnetic semiconductor heterostructures.
Titolo: | Ferromagnetic resonant tunneling diodes as spin polarimeters | |
Autori: | ||
Editore: | American Institute of Physics | |
Data di pubblicazione: | 2003 | |
Rivista: | ||
Digital Object Identifier (DOI): | https://doi.org/10.1063/1.1567812 | |
Parole chiave (inglese): | diodes ferromagnetic materials heterojunctions magnetic semiconductors Physics polarization resonant tunneling spin polarization | |
Handle: | http://hdl.handle.net/11384/9000 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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