A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer embedded between two insulating barriers. A simple procedure, based on a detailed analysis of the differential conductance, allows one to accurately determine the polarization of the ferromagnet. The spin-filtering character of such a system is furthermore addressed. We show that a 100% spin selectivity can be achieved under appropriate conditions. This approach is believed to be well suited for the investigation of diluted magnetic semiconductor heterostructures.
|Titolo:||Ferromagnetic resonant tunneling diodes as spin polarimeters|
|Editore:||American Institute of Physics|
|Data di pubblicazione:||2003|
|Digital Object Identifier (DOI):||https://doi.org/10.1063/1.1567812|
|Parole chiave (inglese):||diodes|
|Appare nelle tipologie:||1.1 Articolo in rivista|