The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasiclassical Green’s-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.

Evidence of two-electron tunneling interference in Nb/InAs junctions

PINGUE, Pasqualantonio;BELTRAM, Fabio;FAZIO, ROSARIO
2000

Abstract

The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasiclassical Green’s-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11384/9990
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