We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications, We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced. (C) 2002 Elsevier Science B.V. All rights reserved.
|Titolo:||Feasibility studies of microelectrode silicon detectors with integrated electronics RID H-3035-2011|
|Data di pubblicazione:||2002|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/S0168-9002(01)01777-6|
|Appare nelle tipologie:||1.1 Articolo in rivista|