A theory for the electron (and hole) g factor in multivalley lead-salt IV-VI semiconductor quantum wells (QWs) is presented. An effective Hamiltonian for theQWelectronic states in the presence of an external magnetic field is introduced within the envelope-function approximation, based on the multiband kp Dimmock model for the bulk. The mesoscopic spin-orbit (Rashba-type) and Zeeman interactions are taken into account on an equal footing and the effective g factor in symmetric quantum wells (g*(QW)) is calculated analytically for each nonequivalent conduction-band (and valence-band) valley, and for QWs grown along different crystallographic directions.

Effective g-factor tensor for carriers in IV-VI semiconductor quantum wells

LA ROCCA, Giuseppe Carlo
2015

Abstract

A theory for the electron (and hole) g factor in multivalley lead-salt IV-VI semiconductor quantum wells (QWs) is presented. An effective Hamiltonian for theQWelectronic states in the presence of an external magnetic field is introduced within the envelope-function approximation, based on the multiband kp Dimmock model for the bulk. The mesoscopic spin-orbit (Rashba-type) and Zeeman interactions are taken into account on an equal footing and the effective g factor in symmetric quantum wells (g*(QW)) is calculated analytically for each nonequivalent conduction-band (and valence-band) valley, and for QWs grown along different crystallographic directions.
2015
Settore FIS/03 - Fisica della Materia
spintronics; g-factor; Rashba effect; IV-VI quantum wells
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11384/58705
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