Effective g-factor tensor for carriers in IV-VI semiconductor quantum wells

A theory for the electron (and hole) g factor in multivalley lead-salt IV-VI semiconductor quantum wells (QWs) is presented. An effective Hamiltonian for theQWelectronic states in the presence of an external magnetic field is introduced within the envelope-function approximation, based on the multiband kp Dimmock model for the bulk. The mesoscopic spin-orbit (Rashba-type) and Zeeman interactions are taken into account on an equal footing and the effective g factor in symmetric quantum wells (g*(QW)) is calculated analytically for each nonequivalent conduction-band (and valence-band) valley, and for QWs grown along different crystallographic directions.