We present a new approach to the design of monolithic active pixel sensors (MAPS) in CMOS technology. By exploiting the triple well option, available in modern deep-submicron processes, it was possible to implement at the pixel level a full analog signal processor and to increase the area of the sensing electrode. These two new features aim to address some limiting aspects of conventional MAPS, such as the read-out speed and the charge collection efficiency. We report on the characterization of the first prototype chip, in particular the calibration with soft X-rays and the response to beta-rays, demonstrating the capability of the sensor in detecting ionizing radiation. (c) 2006 Elsevier B.V. All rights reserved.
|Titolo:||A new approach to the design of monolithic active pixel detectors in 0.13 mu m triple well CMOS technology RID H-3035-2011|
|Data di pubblicazione:||2006|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/j.nima.2006.09.013|
|Appare nelle tipologie:||1.1 Articolo in rivista|