We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a CMOS 130 nm process. Two different geometries of the collecting electrode (namely "Apsel 3T(1) M(1)" and "Apsel 3T(1) M(2)") was implemented to compare their charge collection efficiency. The results of the characterization of the various versions of pixel matrices with a pion beam of 120 GeV/c at the SPS H6 CERN facility will be presented. The performances of an "Apsel 3T(1)" chip irradiated with a dose up to 10 Mrad (Co(60)) was also measured. Comparison will be presented among the irradiated and the new chip showing the impact of radiation damages on tracking efficiencies. (C) 2010 Elsevier B.V. All rights reserved. RI Forti, Francesco/H-3035-2011; Neri, Nicola/G-3991-2012; Gabrielli, Alessandro/H-4931-2012; Villa, Mauro/C-9883-2009; Dalla Betta, Gian-Franco/I-1783-2012; Ratti, Lodovico/I-8836-2012; Giorgi, Filippo Maria/I-7602-2012
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