We propose a semiconductor microcavity structure in which the cavity layer is entirely both optically and electronically active. Optical spectra at normal incidence are studied theoretically, showing the drastic effects of the cavity polariton mode splitting and of the Bragg mirror confinement.
POLARITONS IN SEMICONDUCTOR MICROCAVITIES - EFFECT OF BRAGG CONFINEMENT
TREDICUCCI A;
1993
Abstract
We propose a semiconductor microcavity structure in which the cavity layer is entirely both optically and electronically active. Optical spectra at normal incidence are studied theoretically, showing the drastic effects of the cavity polariton mode splitting and of the Bragg mirror confinement.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.