statistiche ricercatore

Continente	#
NA - Nord America	1.338
EU - Europa	877
AS - Asia	708
SA - Sud America	79
AF - Africa	24
Continente sconosciuto - Info sul continente non disponibili	5
Totale	3.031

Nazione	#
US - Stati Uniti d'America	1.305
RU - Federazione Russa	259
SG - Singapore	205
IT - Italia	168
CN - Cina	166
IE - Irlanda	101
SE - Svezia	101
KR - Corea	76
VN - Vietnam	70
DE - Germania	65
BR - Brasile	56
UA - Ucraina	48
HK - Hong Kong	47
TR - Turchia	43
GB - Regno Unito	36
IN - India	29
FR - Francia	25
CA - Canada	19
FI - Finlandia	16
AT - Austria	12
MX - Messico	10
BD - Bangladesh	9
BE - Belgio	9
IQ - Iraq	9
ES - Italia	8
ID - Indonesia	8
ZA - Sudafrica	8
IL - Israele	7
JP - Giappone	7
NL - Olanda	7
PL - Polonia	7
CH - Svizzera	6
PK - Pakistan	6
VE - Venezuela	6
AR - Argentina	5
LT - Lituania	5
PH - Filippine	5
EC - Ecuador	4
EU - Europa	4
MA - Marocco	4
CO - Colombia	3
EG - Egitto	3
IR - Iran	3
JO - Giordania	3
KE - Kenya	3
SA - Arabia Saudita	3
CL - Cile	2
OM - Oman	2
TN - Tunisia	2
AL - Albania	1
AO - Angola	1
BB - Barbados	1
BH - Bahrain	1
BO - Bolivia	1
BT - Bhutan	1
BZ - Belize	1
CM - Camerun	1
CR - Costa Rica	1
DO - Repubblica Dominicana	1
DZ - Algeria	1
HU - Ungheria	1
KW - Kuwait	1
KZ - Kazakistan	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
MM - Myanmar	1
NO - Norvegia	1
PE - Perù	1
RO - Romania	1
SN - Senegal	1
SY - Repubblica araba siriana	1
TW - Taiwan	1
UY - Uruguay	1
UZ - Uzbekistan	1
XK - ???statistics.table.value.countryCode.XK???	1
Totale	3.031

Nome	#
Complete thermoelectric benchmarking of individual InSb nanowires using combined micro-Raman and electric transport analysis	296
Broadband Dynamic Polarization Conversion in Optomechanical Metasurfaces	244
Nanowire-based architectures for the detection of THz radiation	244
Room temperature Terahertz detectors based on semiconductor nanowire field-effect transistors	242
Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots	238
Room temperature terahertz detectors based on semiconductor nanowire field effect transistors	228
Photonic bands, superchirality, and inverse design of a chiral minimal metasurface	213
Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions	212
Electron beam induced current in InSb-InAs nanowire type-III heterostructures	205
Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors	204
Symmetry enhanced non-reciprocal polarization rotation in a terahertz metal-graphene metasurface	202
Semiconductor nanowire field-effect transistors: towards high-frequency THz detectors	186
Selfmix and optomechanics with silicon nitride membrane	184
Terahertz quantum cascade dipole-antenna vertically emitting continuous wave laser	160
Totale	3.058

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	56	0	0	0	0	0	0	0	0	0	33	6	17
2021/2022	131	11	0	1	10	11	4	4	10	9	10	8	53
2022/2023	549	36	51	18	61	32	57	0	119	153	3	8	11
2023/2024	181	12	8	23	5	12	51	8	3	16	4	0	39
2024/2025	446	20	6	23	30	77	2	0	11	105	34	62	76
2025/2026	1.297	111	102	185	141	112	66	204	80	222	74	0	0
Totale													3.058