SORBA, LUCIA
 Distribuzione geografica
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Continente #
NA - Nord America 8.886
EU - Europa 5.648
AS - Asia 4.775
SA - Sud America 569
AF - Africa 140
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 15
Totale 20.059
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Nazione #
US - Stati Uniti d'America 8.706
RU - Federazione Russa 1.843
SG - Singapore 1.489
IT - Italia 1.156
CN - Cina 1.135
IE - Irlanda 623
SE - Svezia 507
KR - Corea 487
DE - Germania 460
VN - Vietnam 429
BR - Brasile 401
HK - Hong Kong 334
TR - Turchia 317
UA - Ucraina 252
GB - Regno Unito 233
IN - India 127
FI - Finlandia 115
FR - Francia 113
CA - Canada 100
BD - Bangladesh 95
BE - Belgio 57
AT - Austria 54
JP - Giappone 54
AR - Argentina 48
MX - Messico 48
PK - Pakistan 46
IQ - Iraq 44
NL - Olanda 42
PL - Polonia 38
ZA - Sudafrica 38
ID - Indonesia 37
ES - Italia 34
CH - Svizzera 32
VE - Venezuela 27
IL - Israele 24
CO - Colombia 20
PH - Filippine 20
EC - Ecuador 19
LT - Lituania 19
CL - Cile 18
EU - Europa 18
MY - Malesia 18
EG - Egitto 17
MA - Marocco 16
UZ - Uzbekistan 15
SA - Arabia Saudita 14
TN - Tunisia 13
JM - Giamaica 12
IR - Iran 11
JO - Giordania 11
AU - Australia 10
DZ - Algeria 10
KE - Kenya 10
BO - Bolivia 9
PE - Perù 9
RO - Romania 9
AZ - Azerbaigian 8
NO - Norvegia 8
PY - Paraguay 8
UY - Uruguay 8
AE - Emirati Arabi Uniti 7
AO - Angola 7
TH - Thailandia 7
KZ - Kazakistan 6
LB - Libano 6
LY - Libia 6
NP - Nepal 6
AL - Albania 5
DK - Danimarca 5
HU - Ungheria 5
OM - Oman 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
EE - Estonia 4
HN - Honduras 4
MD - Moldavia 4
BY - Bielorussia 3
MU - Mauritius 3
NI - Nicaragua 3
PA - Panama 3
PT - Portogallo 3
QA - Qatar 3
SN - Senegal 3
SY - Repubblica araba siriana 3
TW - Taiwan 3
XK - ???statistics.table.value.countryCode.XK??? 3
BB - Barbados 2
BH - Bahrain 2
CG - Congo 2
CI - Costa d'Avorio 2
ET - Etiopia 2
HR - Croazia 2
HT - Haiti 2
LU - Lussemburgo 2
ME - Montenegro 2
MG - Madagascar 2
MK - Macedonia 2
MN - Mongolia 2
NR - Nauru 2
Totale 20.020
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Città #
Ashburn 1.186
Dallas 1.063
Singapore 924
Chandler 769
San Jose 672
Dublin 623
Moscow 543
Pisa 508
Jacksonville 505
Seoul 482
Boardman 378
Council Bluffs 369
Ann Arbor 338
Hong Kong 301
New York 251
Los Angeles 231
Izmir 206
Hefei 188
Beijing 182
Wilmington 175
Ho Chi Minh City 149
The Dalles 143
Boston 133
Düsseldorf 131
Millbury 115
Mestre 110
Hanoi 107
Chicago 88
Kent 88
Munich 86
Buffalo 84
Istanbul 79
Lauterbourg 75
Ogden 68
Milan 67
San Mateo 67
Santa Clara 66
Scuola 65
San Paolo di Civitate 64
São Paulo 62
Brussels 57
Bremen 54
Orem 54
Washington 53
Seattle 51
Vienna 51
Princeton 46
Montreal 45
Tokyo 45
Lawrence 44
Woodbridge 43
Dearborn 42
Chennai 38
Warsaw 37
Houston 36
Frankfurt am Main 33
Shanghai 33
Denver 29
Guangzhou 28
London 28
Helsinki 27
Columbus 26
Toronto 26
Wuhan 26
North Bergen 25
Phoenix 24
Atlanta 23
Salt Lake City 23
Baghdad 22
Jakarta 22
Las Vegas 22
Padova 22
Brooklyn 21
Da Nang 21
Poplar 21
Amsterdam 20
Mexico City 20
San Giuliano Terme 20
Stockholm 20
Johannesburg 19
Manchester 18
Rome 17
Voghera 17
Ankara 16
Bern 16
Nuremberg 16
Florence 15
Haiphong 15
Kunming 15
Lahore 15
Saint Petersburg 15
Holon 14
Jinan 14
San Francisco 14
Lappeenranta 13
Mumbai 13
Rio de Janeiro 13
Elk Grove Village 12
Kuala Lumpur 12
Tashkent 12
Totale 13.330
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Nome #
Biharmonic-Drive Tunable Josephson Diode 388
Complete thermoelectric benchmarking of individual InSb nanowires using combined micro-Raman and electric transport analysis 306
Giant thermovoltage in single InAs-nanowire FETs 305
InAs nanowire superconducting tunnel junctions: Quasiparticle spectroscopy, thermometry, and nanorefrigeration 302
Crystal Phase Induced Bandgap Modifications in AlAs Nanowires Probed by Resonant Raman Spectroscopy 294
Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices 273
Morphology control of single-crystal InSb nanostructures by tuning the growth parameters 273
Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots 269
A ballistic quantum ring Josephson interferometer 268
III-V semicondutor nanostructures and iontronics: InAs nanowire-based electric double layer field effect transistors 267
Conductometric sensing with individual InAs nanowires 266
Impact of electrostatic doping on carrier concentration and mobility in InAs nanowires 254
Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires 254
Electrostatic spin control in multi-barrier nanowires 252
Self-Catalyzed InSb/InAs Quantum Dot Nanowires 250
Relevant energy scale in hybrid mesoscopic Josephson junctions 249
Nanowire-based architectures for the detection of THz radiation 248
Heterogeneous nucleation of catalyst-free InAs nanowires on silicon 247
Large thermal biasing of individual gated nanostructures 246
Room temperature Terahertz detectors based on semiconductor nanowire field-effect transistors 246
Heat-Driven Iontronic Nanotransistors 244
Electrostatic tailoring of magnetic interference in quantum point contact ballistic Josephson junctions 243
Gate-Tunable Spatial Modulation of Localized Plasmon Resonances 243
Nanowire and graphene architectures for Room Temperature THz detection 241
Self-Assembled InAs Nanowires as Optical Reflectors 241
Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires 240
Charge localization and reentrant superconductivity in a quasi-ballistic InAs nanowire coupled to superconductors 240
Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission 239
Growth of self-catalyzed inas/insb axial heterostructured nanowires: Experiment and theory 239
Room temperature terahertz detectors based on semiconductor nanowire field effect transistors 235
Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography 235
GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters 234
Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy 232
One dimensional semiconductor nanostructures: An effective active-material for terahertz detection 232
A ballistic two-dimensional-electron-gas Andreev interferometer 232
Evidence of material mixing during local anodic oxidation nanolithography 231
Local noise in a diffusive conductor 231
Synthesis of AlAs and AlAs–GaAs Core–Shell Nanowires 229
Growth of defect-free GaP nanowires 227
Pb/InAs nanowire josephson junction with high critical current and magnetic flux focusing 227
Focused ion beam patterned Hall nano-sensors 226
Room-temperature nanowire terahertz photodetectors 223
Catalyst Composition Tuning: The Key for the Growth of Straight Axial Nanowire Heterostructures with Group III Interchange 223
Desorption dynamics of oxide nanostructures fabricated by local anodic oxidation nanolithography 222
Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method 221
Toward Quantum Hall Effect in a Josephson Junction 221
Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance 220
Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna 219
Raman sensitivity to crystal structure in InAs nanowires 215
X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures 214
Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors 214
Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires 213
Transport anisotropy in InGaAs 2D electron gases 211
Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core-Shell Nanowires 210
Hall nano-probes fabricated by focused ion beam 209
Modeling of InAs–InSb nanowires grown by Au-assisted chemical beam epitaxy 207
Ni-rich phases identification in GaAs nanowire devices by mean of electron diffraction tomography 206
Noise thermometry applied to thermoelectric measurements in InAs nanowires 204
In0.75Ga0.25As on GaAs submicron rings and their application for coherent nanoelectronic devices 202
Magnetic field and temperature dependence of an atomic force microscope-defined quantum point contact 201
GaAs oxide desorption under extreme ultraviolet photon flux 201
Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire Arrays 201
Large-Area Ohmic Top Contact to Vertically Grown Nanowires Using a Free-Standing Au Microplate Electrode 200
Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots 200
Transport anisotropy in high mobility In0.75Ga0.25As 2DEGs 199
Towards a Hybrid High Critical Temperature Superconductor Junction With a Semiconducting InAs Nanowire Barrier 197
Length distributions of Au-catalyzed and In-catalyzed InAs nanowires 195
Semiconductor nanowire field-effect transistors: towards high-frequency THz detectors 193
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires 192
Electrostatic Control of the Thermoelectric Figure of Merit in Ion-Gated Nanotransistors 188
Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two- dimensional electron gases 178
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells 178
Gate-controlled supercurrent in ballistic InSb nanoflag Josephson junctions 178
Type II band alignment in InAs zinc-blende/wurtzite heterostructured nanowires 177
Calibration-Free and High-Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots 174
Transport anisotropy in In0.75Ga0.25As two-dimensional electron gases induced by indium concentration modulation 173
Rapid method for the interconnection of single nano-objects 172
Workers’ exposure to nano-objects with different dimensionalities in R&D laboratories: Measurement strategy and field studies 169
Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon 163
Ultrafast Photoacoustic Nanometrology of InAs Nanowires Mechanical Properties 160
Strain-induced band alignment in wurtzite/zinc-blende InAs heterostructured nanowires 157
Mapping of axial strain in InAs/InSb heterostructured nanowires 155
Giant reduction of thermal conductivity and enhancement of thermoelectric performance in twinning superlattice InAsSb nanowires 154
InAs Nanowire-Based Twin Electrical Sensors Enabling Simultaneous Gas Detection 147
Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy 144
Laser induced photothermal effects on InAs nanowires: tuning the hole density 144
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1−xAs Metamorphic Buffers 139
Novel Structures of Gallenene Intercalated in Epitaxial Graphene 134
Strong modulations of optical reflectance in tapered core-shell nanowires 132
Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires 131
Extremely weak sub-Kelvin electron-phonon coupling in InAs on Insulator 96
Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics 93
Giant thermal modulation via a semiconductor-superconductor photonic field-effect heat transistor 82
Unveiling the Current-Phase Relationship of InSb Nanoflag Josephson Junctions Using a NanoSQUID Magnetometer 72
Zincblende InAsxP1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission 70
Tunable GaAsxP1–x Quantum-Dot Emission in Wurtzite GaP Nanowires 68
Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy 65
The role of composition and diameter in the crystal purity of InAsxP1−x nanowires 61
Phonon Interference Effects in GaAs-GaP Superlattice Nanowires 49
Single InAs Nanowire Hypersonic Acoustic Nanoresonator 46
Totale 20.280
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Categoria #
all - tutte 74.688
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.688
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202172 0 0 0 0 0 0 0 0 0 0 0 72
2021/2022801 40 23 5 57 78 5 22 68 40 112 32 319
2022/20233.167 188 343 191 252 205 292 10 660 874 21 77 54
2023/20241.126 77 26 99 19 69 343 79 91 93 27 36 167
2024/20252.973 149 31 154 195 420 39 40 96 699 240 403 507
2025/20269.675 621 583 1.317 974 839 469 1.556 613 1.477 633 312 281
Totale 20.316