ERCOLANI, Daniele
 Distribuzione geografica
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Continente #
NA - Nord America 9.162
EU - Europa 5.954
AS - Asia 4.811
SA - Sud America 565
AF - Africa 134
Continente sconosciuto - Info sul continente non disponibili 37
OC - Oceania 14
Totale 20.677
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Nazione #
US - Stati Uniti d'America 8.989
RU - Federazione Russa 1.634
SG - Singapore 1.498
IT - Italia 1.262
CN - Cina 1.175
IE - Irlanda 736
SE - Svezia 678
KR - Corea 527
DE - Germania 506
BR - Brasile 400
TR - Turchia 363
VN - Vietnam 334
HK - Hong Kong 326
UA - Ucraina 311
GB - Regno Unito 246
IN - India 141
FI - Finlandia 131
FR - Francia 116
CA - Canada 97
BD - Bangladesh 87
AT - Austria 57
BE - Belgio 54
MX - Messico 51
IQ - Iraq 49
CH - Svizzera 48
JP - Giappone 47
PK - Pakistan 45
AR - Argentina 43
ZA - Sudafrica 35
NL - Olanda 34
PL - Polonia 33
ID - Indonesia 32
ES - Italia 30
VE - Venezuela 28
EU - Europa 27
PH - Filippine 25
EC - Ecuador 24
IL - Israele 24
MA - Marocco 24
CO - Colombia 23
SA - Arabia Saudita 19
CL - Cile 16
MY - Malesia 16
JO - Giordania 15
LT - Lituania 15
EG - Egitto 13
TN - Tunisia 13
UZ - Uzbekistan 12
KE - Kenya 11
RO - Romania 11
IR - Iran 10
AU - Australia 9
AZ - Azerbaigian 9
PE - Perù 9
AE - Emirati Arabi Uniti 7
DZ - Algeria 7
JM - Giamaica 7
KZ - Kazakistan 7
TH - Thailandia 7
UY - Uruguay 7
A2 - ???statistics.table.value.countryCode.A2??? 6
AL - Albania 6
AO - Angola 6
DK - Danimarca 6
NP - Nepal 6
PY - Paraguay 6
BO - Bolivia 5
ET - Etiopia 5
LB - Libano 5
LY - Libia 5
EE - Estonia 4
HU - Ungheria 4
OM - Oman 4
TW - Taiwan 4
BG - Bulgaria 3
CR - Costa Rica 3
CZ - Repubblica Ceca 3
GR - Grecia 3
HR - Croazia 3
MD - Moldavia 3
PA - Panama 3
QA - Qatar 3
XK - ???statistics.table.value.countryCode.XK??? 3
BB - Barbados 2
BH - Bahrain 2
BY - Bielorussia 2
BZ - Belize 2
CG - Congo 2
DO - Repubblica Dominicana 2
GF - Guiana Francese 2
HT - Haiti 2
LU - Lussemburgo 2
MG - Madagascar 2
MT - Malta 2
MU - Mauritius 2
NI - Nicaragua 2
NR - Nauru 2
PS - Palestinian Territory 2
RS - Serbia 2
SI - Slovenia 2
Totale 20.643
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Città #
Ashburn 1.115
Singapore 933
Chandler 892
Dallas 829
Dublin 737
San Jose 672
Jacksonville 659
Pisa 610
Seoul 523
Moscow 445
Boardman 433
Ann Arbor 367
Council Bluffs 327
Hong Kong 299
New York 256
Izmir 239
Wilmington 223
Hefei 208
Los Angeles 198
The Dalles 178
Beijing 171
Mestre 169
Boston 161
Düsseldorf 161
Millbury 139
Ho Chi Minh City 110
Chicago 100
Scuola 98
Kent 95
Istanbul 91
Hanoi 85
San Mateo 83
Lauterbourg 77
Ogden 73
Lawrence 67
San Paolo di Civitate 64
Munich 63
São Paulo 63
Washington 63
Santa Clara 61
Bremen 60
Seattle 59
Woodbridge 58
Buffalo 57
Brussels 54
Vienna 51
Milan 49
Dearborn 48
Orem 46
Princeton 45
Montreal 41
Tokyo 41
Chennai 39
Guangzhou 38
Shanghai 37
Houston 35
Columbus 34
Helsinki 32
Bern 31
Denver 31
Frankfurt am Main 31
Warsaw 31
London 29
Toronto 28
Baghdad 26
North Bergen 25
Padova 25
Wuhan 23
Saint Petersburg 22
Atlanta 21
Brooklyn 21
Las Vegas 20
Phoenix 20
Salt Lake City 20
Jakarta 19
Johannesburg 19
Kunming 17
Mexico City 17
Stockholm 17
Berlin 16
Da Nang 16
Jinan 16
Mumbai 16
Amsterdam 15
Elk Grove Village 15
Manchester 15
Poplar 15
Rome 15
San Giuliano Terme 15
Turku 15
Holon 14
Dhaka 13
Lahore 13
San Francisco 13
Amman 12
Ankara 12
Hangzhou 12
Miami 12
Nanjing 12
Nuremberg 12
Totale 13.748
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Nome #
Complete thermoelectric benchmarking of individual InSb nanowires using combined micro-Raman and electric transport analysis 306
Giant thermovoltage in single InAs-nanowire FETs 305
InAs nanowire superconducting tunnel junctions: Quasiparticle spectroscopy, thermometry, and nanorefrigeration 302
Catalyst-free growth of InAs nanowires on Si (111) by CBE 301
Crystal Phase Induced Bandgap Modifications in AlAs Nanowires Probed by Resonant Raman Spectroscopy 294
High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices 277
Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices 273
Morphology control of single-crystal InSb nanostructures by tuning the growth parameters 273
Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots 269
III-V semicondutor nanostructures and iontronics: InAs nanowire-based electric double layer field effect transistors 267
Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires 254
Electrostatic spin control in multi-barrier nanowires 252
Self-Catalyzed InSb/InAs Quantum Dot Nanowires 250
Nanowire-based architectures for the detection of THz radiation 248
Heterogeneous nucleation of catalyst-free InAs nanowires on silicon 247
Large thermal biasing of individual gated nanostructures 246
Room temperature Terahertz detectors based on semiconductor nanowire field-effect transistors 246
Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots 244
Coexistence of Vapor-Liquid-Solid and Vapor-Solid-Solid Growth Modes in Pd-Assisted InAs Nanowires 243
Gate-Tunable Spatial Modulation of Localized Plasmon Resonances 243
Nanowire and graphene architectures for Room Temperature THz detection 242
Electronic properties of quantum dot systems realized in semiconductor nanowires 241
Self-Assembled InAs Nanowires as Optical Reflectors 241
Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors 240
Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires 240
Charge localization and reentrant superconductivity in a quasi-ballistic InAs nanowire coupled to superconductors 240
Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission 239
Room temperature terahertz detectors based on semiconductor nanowire field effect transistors 235
Controlling the diameter distribution and density of InAs nanowires grown by Au-assisted methods 235
Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography 235
GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters 234
Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire FET 233
Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy 232
One dimensional semiconductor nanostructures: An effective active-material for terahertz detection 232
Evidence of material mixing during local anodic oxidation nanolithography 231
Local noise in a diffusive conductor 231
Thermoelectric Conversion at 30 K in InAs/InP Nanowire Quantum Dots 229
Synthesis of AlAs and AlAs–GaAs Core–Shell Nanowires 229
Nanowire-based field effect transistors for terahertz detection and imaging systems. 228
Growth of defect-free GaP nanowires 227
Pb/InAs nanowire josephson junction with high critical current and magnetic flux focusing 227
Focused ion beam patterned Hall nano-sensors 226
Terahertz photodetectors based on tapered semiconductor nanowires 224
Room-temperature nanowire terahertz photodetectors 223
Catalyst Composition Tuning: The Key for the Growth of Straight Axial Nanowire Heterostructures with Group III Interchange 223
Desorption dynamics of oxide nanostructures fabricated by local anodic oxidation nanolithography 222
Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method 221
Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance 220
Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna 219
Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors 217
Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions 217
Semiconductor nanowires for highly sensitive, room-temperature detection of terahertz quantum cascade laser emission 215
Raman sensitivity to crystal structure in InAs nanowires 215
Manipulation of Electron Orbitals in Hard-Wall InAs/InP Nanowire Quantum Dots 214
X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures 214
Electron beam induced current in InSb-InAs nanowire type-III heterostructures 214
Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors 214
Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires 213
InAs/InSb nanowires heterostructures grown by chemical beam epitaxy 212
Transport anisotropy in InGaAs 2D electron gases 211
Behavior of SiO2 nanostructures under intense EUV illumination 211
Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis 210
Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core-Shell Nanowires 210
Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors 209
Hall nano-probes fabricated by focused ion beam 209
Faceting of InAs-InSb Heterostructured Nanowires 208
Modeling of InAs–InSb nanowires grown by Au-assisted chemical beam epitaxy 207
Ni-rich phases identification in GaAs nanowire devices by mean of electron diffraction tomography 206
Noise thermometry applied to thermoelectric measurements in InAs nanowires 204
Magnetic field and temperature dependence of an atomic force microscope-defined quantum point contact 201
GaAs oxide desorption under extreme ultraviolet photon flux 201
Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire Arrays 201
Large-Area Ohmic Top Contact to Vertically Grown Nanowires Using a Free-Standing Au Microplate Electrode 200
Transport anisotropy in high mobility In0.75Ga0.25As 2DEGs 199
Nanoscale spin rectifiers controlled by the Stark effect 199
Towards a Hybrid High Critical Temperature Superconductor Junction With a Semiconducting InAs Nanowire Barrier 197
Length distributions of Au-catalyzed and In-catalyzed InAs nanowires 195
Semiconductor nanowire field-effect transistors: towards high-frequency THz detectors 193
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires 192
Growth mechanism of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy 187
Hot-electron effects in InAs nanowire Josephson junctions 186
Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two- dimensional electron gases 178
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells 178
Type II band alignment in InAs zinc-blende/wurtzite heterostructured nanowires 177
Transport anisotropy in In0.75Ga0.25As two-dimensional electron gases induced by indium concentration modulation 173
Rapid method for the interconnection of single nano-objects 172
Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon 163
Suppression of lateral growth in InAs/InAsSb heterostructured nanowires 157
LEEM and XPEEM studies of C-AFM induced surface modifications of thermally grown SiO2 157
Strain-induced band alignment in wurtzite/zinc-blende InAs heterostructured nanowires 157
Growth of InAs/InAsSb heterostructured nanowires 156
Mapping of axial strain in InAs/InSb heterostructured nanowires 155
Pd-Assisted Growth of In As Nanowires 152
Laser induced photothermal effects on InAs nanowires: tuning the hole density 144
Strong modulations of optical reflectance in tapered core-shell nanowires 132
null 37
Totale 20.908
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Categoria #
all - tutte 78.305
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 78.305
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202189 0 0 0 0 0 0 0 0 0 0 0 89
2021/2022949 60 14 5 63 107 8 24 88 50 137 26 367
2022/20233.705 225 374 219 298 233 352 3 780 1.043 30 84 64
2023/20241.217 107 32 121 23 77 385 63 67 98 32 28 184
2024/20253.069 145 38 138 214 486 53 33 104 674 213 447 524
2025/20268.639 615 646 1.136 865 734 439 1.362 522 1.286 487 300 247
Totale 20.908