ERCOLANI, Daniele
 Distribuzione geografica
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Continente #
NA - Nord America 5.056
EU - Europa 4.406
AS - Asia 1.382
SA - Sud America 114
Continente sconosciuto - Info sul continente non disponibili 33
AF - Africa 9
OC - Oceania 8
Totale 11.008
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Nazione #
US - Stati Uniti d'America 5.021
IT - Italia 1.186
IE - Irlanda 735
SE - Svezia 665
RU - Federazione Russa 585
SG - Singapore 526
CN - Cina 423
DE - Germania 412
TR - Turchia 326
UA - Ucraina 308
GB - Regno Unito 166
FI - Finlandia 113
BR - Brasile 95
AT - Austria 55
BE - Belgio 54
CH - Svizzera 46
CA - Canada 30
EU - Europa 27
NL - Olanda 19
IL - Israele 17
FR - Francia 14
ID - Indonesia 14
PK - Pakistan 14
HK - Hong Kong 11
RO - Romania 9
BD - Bangladesh 8
IR - Iran 8
AU - Australia 7
JP - Giappone 7
A2 - ???statistics.table.value.countryCode.A2??? 6
DK - Danimarca 5
ES - Italia 5
IN - India 5
AR - Argentina 4
CL - Cile 4
KR - Corea 4
PL - Polonia 4
EE - Estonia 3
JO - Giordania 3
MA - Marocco 3
MX - Messico 3
PE - Perù 3
VE - Venezuela 3
CO - Colombia 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
EG - Egitto 2
GR - Grecia 2
HU - Ungheria 2
IQ - Iraq 2
KZ - Kazakistan 2
LT - Lituania 2
LU - Lussemburgo 2
MD - Moldavia 2
OM - Oman 2
VN - Vietnam 2
ZA - Sudafrica 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
BG - Bulgaria 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
HR - Croazia 1
IS - Islanda 1
KG - Kirghizistan 1
LK - Sri Lanka 1
LV - Lettonia 1
MK - Macedonia 1
MT - Malta 1
MY - Malesia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
QA - Qatar 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TG - Togo 1
TN - Tunisia 1
TW - Taiwan 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 11.008
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Città #
Chandler 892
Dublin 735
Jacksonville 655
Pisa 609
Boardman 433
Ashburn 392
Ann Arbor 367
Singapore 313
Izmir 238
Wilmington 218
Moscow 202
New York 172
Mestre 169
Düsseldorf 161
Boston 149
Millbury 139
The Dalles 109
Scuola 98
Istanbul 84
San Mateo 83
Ogden 73
Lawrence 67
San Paolo di Civitate 64
Washington 63
Bremen 60
Woodbridge 58
Brussels 54
Beijing 53
Vienna 51
Seattle 50
Dearborn 48
Princeton 45
Milan 36
Guangzhou 33
Bern 31
Shanghai 30
Helsinki 29
Padova 25
Los Angeles 22
Saint Petersburg 22
Wuhan 22
Chicago 21
Council Bluffs 20
Las Vegas 19
Toronto 18
Hefei 17
Houston 16
Berlin 15
Kunming 15
San Giuliano Terme 15
Santa Clara 15
Holon 14
Jakarta 14
Jinan 12
Nanjing 12
Andover 11
Fairfield 11
Hong Kong 11
São Paulo 11
Hanover 10
London 10
Tappahannock 10
Voghera 10
Auburn Hills 9
Cusano Milanino 9
Nanchang 9
Norwalk 9
Astoria 7
Edinburgh 7
Jiaxing 7
Lahore 7
Ottawa 7
Shenzhen 7
Zurich 7
Bientina 6
Dalian 6
Florence 6
Jinhua 6
Munich 6
Nuremberg 6
Stagno 6
Wuxi 6
Cambridge 5
Falls Church 5
Frankfurt am Main 5
Fuzhou 5
Modena 5
Redwood City 5
San Francisco 5
Tokyo 5
Trento 5
Amsterdam 4
Campi Bisenzio 4
Changchun 4
Clearwater 4
Islamabad 4
Latina 4
Rome 4
Romford 4
Serra 4
Totale 7.675
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Nome #
Giant thermovoltage in single InAs-nanowire FETs 176
High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices 164
InAs nanowire superconducting tunnel junctions: Quasiparticle spectroscopy, thermometry, and nanorefrigeration 163
Focused ion beam patterned Hall nano-sensors 160
Catalyst-free growth of InAs nanowires on Si (111) by CBE 154
Crystal Phase Induced Bandgap Modifications in AlAs Nanowires Probed by Resonant Raman Spectroscopy 153
Nanowire-based architectures for the detection of THz radiation 151
Complete thermoelectric benchmarking of individual InSb nanowires using combined micro-Raman and electric transport analysis 149
Transport anisotropy in InGaAs 2D electron gases 143
Synthesis of AlAs and AlAs–GaAs Core–Shell Nanowires 142
Nanowire and graphene architectures for Room Temperature THz detection 141
Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors 139
Room temperature terahertz detectors based on semiconductor nanowire field effect transistors 139
Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices 138
Large thermal biasing of individual gated nanostructures 138
Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots 136
Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots 135
Hall nano-probes fabricated by focused ion beam 135
Large-Area Ohmic Top Contact to Vertically Grown Nanowires Using a Free-Standing Au Microplate Electrode 135
Nanowire-based field effect transistors for terahertz detection and imaging systems. 134
Electrostatic spin control in multi-barrier nanowires 134
Transport anisotropy in high mobility In0.75Ga0.25As 2DEGs 133
Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission 131
III-V semicondutor nanostructures and iontronics: InAs nanowire-based electric double layer field effect transistors 129
Faceting of InAs-InSb Heterostructured Nanowires 128
Gate-Tunable Spatial Modulation of Localized Plasmon Resonances 127
Raman sensitivity to crystal structure in InAs nanowires 127
Evidence of material mixing during local anodic oxidation nanolithography 126
Controlling the diameter distribution and density of InAs nanowires grown by Au-assisted methods 126
Morphology control of single-crystal InSb nanostructures by tuning the growth parameters 126
GaAs oxide desorption under extreme ultraviolet photon flux 125
Room-temperature nanowire terahertz photodetectors 125
GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters 125
Coexistence of Vapor-Liquid-Solid and Vapor-Solid-Solid Growth Modes in Pd-Assisted InAs Nanowires 124
Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires 124
Magnetic field and temperature dependence of an atomic force microscope-defined quantum point contact 122
Electron beam induced current in InSb-InAs nanowire type-III heterostructures 122
InAs/InSb nanowires heterostructures grown by chemical beam epitaxy 121
X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures 121
One dimensional semiconductor nanostructures: An effective active-material for terahertz detection 121
Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire FET 120
Terahertz photodetectors based on tapered semiconductor nanowires 120
Room temperature Terahertz detectors based on semiconductor nanowire field-effect transistors 120
Behavior of SiO2 nanostructures under intense EUV illumination 119
Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography 119
Desorption dynamics of oxide nanostructures fabricated by local anodic oxidation nanolithography 119
Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors 117
Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy 116
Heterogeneous nucleation of catalyst-free InAs nanowires on silicon 116
Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors 116
Self-Assembled InAs Nanowires as Optical Reflectors 115
Modeling of InAs–InSb nanowires grown by Au-assisted chemical beam epitaxy 114
Nanoscale spin rectifiers controlled by the Stark effect 114
Pb/InAs nanowire josephson junction with high critical current and magnetic flux focusing 113
Local noise in a diffusive conductor 113
Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires 112
Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna 112
Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires 111
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells 110
Growth of defect-free GaP nanowires 110
Semiconductor nanowire field-effect transistors: towards high-frequency THz detectors 110
Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors 109
Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two- dimensional electron gases 109
Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis 109
Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method 109
Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions 109
Charge localization and reentrant superconductivity in a quasi-ballistic InAs nanowire coupled to superconductors 109
Hot-electron effects in InAs nanowire Josephson junctions 108
Electronic properties of quantum dot systems realized in semiconductor nanowires 108
Transport anisotropy in In0.75Ga0.25As two-dimensional electron gases induced by indium concentration modulation 107
Ni-rich phases identification in GaAs nanowire devices by mean of electron diffraction tomography 107
LEEM and XPEEM studies of C-AFM induced surface modifications of thermally grown SiO2 105
Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire Arrays 105
Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance 105
Semiconductor nanowires for highly sensitive, room-temperature detection of terahertz quantum cascade laser emission 104
Thermoelectric Conversion at 30 K in InAs/InP Nanowire Quantum Dots 103
Rapid method for the interconnection of single nano-objects 101
Noise thermometry applied to thermoelectric measurements in InAs nanowires 101
Towards a Hybrid High Critical Temperature Superconductor Junction With a Semiconducting InAs Nanowire Barrier 101
Self-Catalyzed InSb/InAs Quantum Dot Nanowires 101
Manipulation of Electron Orbitals in Hard-Wall InAs/InP Nanowire Quantum Dots 100
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires 99
Catalyst Composition Tuning: The Key for the Growth of Straight Axial Nanowire Heterostructures with Group III Interchange 98
Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core-Shell Nanowires 98
Growth mechanism of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy 96
Suppression of lateral growth in InAs/InAsSb heterostructured nanowires 94
Length distributions of Au-catalyzed and In-catalyzed InAs nanowires 93
Pd-Assisted Growth of In As Nanowires 88
Strain-induced band alignment in wurtzite/zinc-blende InAs heterostructured nanowires 87
Type II band alignment in InAs zinc-blende/wurtzite heterostructured nanowires 85
Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon 85
Mapping of axial strain in InAs/InSb heterostructured nanowires 84
Growth of InAs/InAsSb heterostructured nanowires 82
Laser induced photothermal effects on InAs nanowires: tuning the hole density 80
Strong modulations of optical reflectance in tapered core-shell nanowires 65
null 37
Totale 11.239
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Categoria #
all - tutte 51.308
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 51.308
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020139 0 0 0 0 0 0 0 0 0 31 103 5
2020/20211.011 114 9 150 17 95 54 67 108 58 207 43 89
2021/2022949 60 14 5 63 107 8 24 88 50 137 26 367
2022/20233.705 225 374 219 298 233 352 3 780 1.043 30 84 64
2023/20241.217 107 32 121 23 77 385 63 67 98 32 28 184
2024/20252.039 145 38 138 214 486 53 33 104 674 154 0 0
Totale 11.239