ERCOLANI, Daniele
 Distribuzione geografica
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Continente #
NA - Nord America 9.548
EU - Europa 5.991
AS - Asia 4.828
SA - Sud America 576
Continente sconosciuto - Info sul continente non disponibili 268
AF - Africa 134
OC - Oceania 14
Totale 21.359
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Nazione #
US - Stati Uniti d'America 9.367
RU - Federazione Russa 1.634
SG - Singapore 1.507
IT - Italia 1.286
CN - Cina 1.180
IE - Irlanda 738
SE - Svezia 678
KR - Corea 527
DE - Germania 506
BR - Brasile 406
TR - Turchia 363
VN - Vietnam 334
HK - Hong Kong 328
UA - Ucraina 311
GB - Regno Unito 246
IN - India 141
FI - Finlandia 131
FR - Francia 121
CA - Canada 100
BD - Bangladesh 87
AT - Austria 57
BE - Belgio 54
MX - Messico 51
CH - Svizzera 49
IQ - Iraq 49
JP - Giappone 47
PK - Pakistan 45
AR - Argentina 44
ZA - Sudafrica 35
NL - Olanda 34
PL - Polonia 33
ES - Italia 32
ID - Indonesia 32
VE - Venezuela 29
EU - Europa 27
PH - Filippine 25
CO - Colombia 24
EC - Ecuador 24
IL - Israele 24
MA - Marocco 24
SA - Arabia Saudita 19
MY - Malesia 17
CL - Cile 16
JO - Giordania 15
LT - Lituania 15
EG - Egitto 13
TN - Tunisia 13
UZ - Uzbekistan 12
KE - Kenya 11
RO - Romania 11
IR - Iran 10
PE - Perù 10
AU - Australia 9
AZ - Azerbaigian 9
JM - Giamaica 8
AE - Emirati Arabi Uniti 7
DZ - Algeria 7
KZ - Kazakistan 7
TH - Thailandia 7
UY - Uruguay 7
A2 - ???statistics.table.value.countryCode.A2??? 6
AL - Albania 6
AO - Angola 6
BO - Bolivia 6
DK - Danimarca 6
NP - Nepal 6
PY - Paraguay 6
ET - Etiopia 5
LB - Libano 5
LY - Libia 5
CR - Costa Rica 4
CZ - Repubblica Ceca 4
EE - Estonia 4
HU - Ungheria 4
OM - Oman 4
TW - Taiwan 4
BG - Bulgaria 3
DO - Repubblica Dominicana 3
GR - Grecia 3
HR - Croazia 3
LU - Lussemburgo 3
MD - Moldavia 3
NI - Nicaragua 3
PA - Panama 3
QA - Qatar 3
XK - ???statistics.table.value.countryCode.XK??? 3
BB - Barbados 2
BH - Bahrain 2
BY - Bielorussia 2
BZ - Belize 2
CG - Congo 2
GF - Guiana Francese 2
HT - Haiti 2
MG - Madagascar 2
MT - Malta 2
MU - Mauritius 2
NR - Nauru 2
PS - Palestinian Territory 2
PT - Portogallo 2
RS - Serbia 2
Totale 21.092
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Città #
Ashburn 1.124
Singapore 939
Chandler 892
Dallas 830
Dublin 739
San Jose 674
Jacksonville 659
Pisa 610
Seoul 523
Council Bluffs 501
Moscow 445
Boardman 433
Ann Arbor 367
Hong Kong 301
New York 256
Izmir 239
Wilmington 223
Hefei 208
Los Angeles 200
The Dalles 178
Beijing 172
Mestre 169
Boston 161
Düsseldorf 161
Millbury 139
Clifton 113
Ho Chi Minh City 110
Chicago 101
Scuola 98
Kent 95
Istanbul 91
Hanoi 85
San Mateo 83
Lauterbourg 77
Ogden 73
Lawrence 67
Santa Clara 65
San Paolo di Civitate 64
Washington 64
Munich 63
São Paulo 63
Bremen 60
Seattle 59
Woodbridge 58
Buffalo 57
Brussels 54
Milan 54
Vienna 51
Dearborn 48
Orem 46
Princeton 45
Montreal 41
Tokyo 41
Chennai 39
Guangzhou 38
Shanghai 37
Houston 36
Columbus 34
Helsinki 32
Bern 31
Denver 31
Frankfurt am Main 31
Warsaw 31
Toronto 30
London 29
Phoenix 27
Baghdad 26
North Bergen 25
Padova 25
Wuhan 23
Brooklyn 22
Saint Petersburg 22
Atlanta 21
Las Vegas 20
Salt Lake City 20
Jakarta 19
Johannesburg 19
Kunming 17
Mexico City 17
Stockholm 17
Berlin 16
Da Nang 16
Jinan 16
Mumbai 16
Amsterdam 15
Elk Grove Village 15
Manchester 15
Poplar 15
Rome 15
San Giuliano Terme 15
Turku 15
Holon 14
Dhaka 13
Lahore 13
San Francisco 13
Amman 12
Ankara 12
Hangzhou 12
Kuala Lumpur 12
Miami 12
Totale 14.070
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Nome #
Complete thermoelectric benchmarking of individual InSb nanowires using combined micro-Raman and electric transport analysis 315
Giant thermovoltage in single InAs-nanowire FETs 310
InAs nanowire superconducting tunnel junctions: Quasiparticle spectroscopy, thermometry, and nanorefrigeration 305
Catalyst-free growth of InAs nanowires on Si (111) by CBE 304
Crystal Phase Induced Bandgap Modifications in AlAs Nanowires Probed by Resonant Raman Spectroscopy 298
High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices 284
Morphology control of single-crystal InSb nanostructures by tuning the growth parameters 279
Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices 276
Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots 276
III-V semicondutor nanostructures and iontronics: InAs nanowire-based electric double layer field effect transistors 275
Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires 261
Electrostatic spin control in multi-barrier nanowires 256
Room temperature Terahertz detectors based on semiconductor nanowire field-effect transistors 256
Self-Catalyzed InSb/InAs Quantum Dot Nanowires 254
Large thermal biasing of individual gated nanostructures 252
Nanowire-based architectures for the detection of THz radiation 251
Heterogeneous nucleation of catalyst-free InAs nanowires on silicon 250
Coexistence of Vapor-Liquid-Solid and Vapor-Solid-Solid Growth Modes in Pd-Assisted InAs Nanowires 248
Gate-Tunable Spatial Modulation of Localized Plasmon Resonances 248
Electronic properties of quantum dot systems realized in semiconductor nanowires 247
Charge localization and reentrant superconductivity in a quasi-ballistic InAs nanowire coupled to superconductors 247
Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots 246
Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors 246
Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission 245
Nanowire and graphene architectures for Room Temperature THz detection 245
Self-Assembled InAs Nanowires as Optical Reflectors 245
Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography 244
Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires 243
Controlling the diameter distribution and density of InAs nanowires grown by Au-assisted methods 240
GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters 239
Room temperature terahertz detectors based on semiconductor nanowire field effect transistors 238
One dimensional semiconductor nanostructures: An effective active-material for terahertz detection 237
Local noise in a diffusive conductor 237
Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire FET 237
Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy 236
Evidence of material mixing during local anodic oxidation nanolithography 235
Pb/InAs nanowire josephson junction with high critical current and magnetic flux focusing 232
Thermoelectric Conversion at 30 K in InAs/InP Nanowire Quantum Dots 232
Synthesis of AlAs and AlAs–GaAs Core–Shell Nanowires 232
Growth of defect-free GaP nanowires 231
Nanowire-based field effect transistors for terahertz detection and imaging systems. 230
Focused ion beam patterned Hall nano-sensors 227
Room-temperature nanowire terahertz photodetectors 227
Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method 227
Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance 227
Catalyst Composition Tuning: The Key for the Growth of Straight Axial Nanowire Heterostructures with Group III Interchange 226
Terahertz photodetectors based on tapered semiconductor nanowires 226
Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna 225
Desorption dynamics of oxide nanostructures fabricated by local anodic oxidation nanolithography 225
X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures 223
Semiconductor nanowires for highly sensitive, room-temperature detection of terahertz quantum cascade laser emission 222
Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors 220
Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions 220
Manipulation of Electron Orbitals in Hard-Wall InAs/InP Nanowire Quantum Dots 219
Raman sensitivity to crystal structure in InAs nanowires 219
Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors 218
InAs/InSb nanowires heterostructures grown by chemical beam epitaxy 217
Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires 217
Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis 217
Electron beam induced current in InSb-InAs nanowire type-III heterostructures 216
Hall nano-probes fabricated by focused ion beam 215
Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core-Shell Nanowires 215
Transport anisotropy in InGaAs 2D electron gases 214
Behavior of SiO2 nanostructures under intense EUV illumination 213
Modeling of InAs–InSb nanowires grown by Au-assisted chemical beam epitaxy 213
Ni-rich phases identification in GaAs nanowire devices by mean of electron diffraction tomography 213
Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors 211
Faceting of InAs-InSb Heterostructured Nanowires 210
Noise thermometry applied to thermoelectric measurements in InAs nanowires 209
Magnetic field and temperature dependence of an atomic force microscope-defined quantum point contact 206
GaAs oxide desorption under extreme ultraviolet photon flux 206
Transport anisotropy in high mobility In0.75Ga0.25As 2DEGs 205
Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire Arrays 204
Large-Area Ohmic Top Contact to Vertically Grown Nanowires Using a Free-Standing Au Microplate Electrode 203
Nanoscale spin rectifiers controlled by the Stark effect 202
Length distributions of Au-catalyzed and In-catalyzed InAs nanowires 202
Towards a Hybrid High Critical Temperature Superconductor Junction With a Semiconducting InAs Nanowire Barrier 200
Semiconductor nanowire field-effect transistors: towards high-frequency THz detectors 197
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires 196
Growth mechanism of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy 193
Hot-electron effects in InAs nanowire Josephson junctions 189
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells 183
Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two- dimensional electron gases 182
Type II band alignment in InAs zinc-blende/wurtzite heterostructured nanowires 181
Transport anisotropy in In0.75Ga0.25As two-dimensional electron gases induced by indium concentration modulation 180
Rapid method for the interconnection of single nano-objects 178
Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon 169
Suppression of lateral growth in InAs/InAsSb heterostructured nanowires 164
Strain-induced band alignment in wurtzite/zinc-blende InAs heterostructured nanowires 162
Mapping of axial strain in InAs/InSb heterostructured nanowires 161
LEEM and XPEEM studies of C-AFM induced surface modifications of thermally grown SiO2 160
Growth of InAs/InAsSb heterostructured nanowires 160
Pd-Assisted Growth of In As Nanowires 158
Laser induced photothermal effects on InAs nanowires: tuning the hole density 151
Strong modulations of optical reflectance in tapered core-shell nanowires 137
null 37
Totale 21.359
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Categoria #
all - tutte 80.887
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 80.887
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022889 0 14 5 63 107 8 24 88 50 137 26 367
2022/20233.705 225 374 219 298 233 352 3 780 1.043 30 84 64
2023/20241.217 107 32 121 23 77 385 63 67 98 32 28 184
2024/20253.069 145 38 138 214 486 53 33 104 674 213 447 524
2025/20268.660 615 646 1.136 865 734 439 1.362 522 1.286 487 300 268
2026/2027430 308 122 0 0 0 0 0 0 0 0 0 0
Totale 21.359